1 X RF power transistors BLV32F PHILIPS
Silicon, NPN, transistor.
The bind is for 1 pcs
Manufacturer: BLV32F
Material type: Si
Polarity: NPN
Maximum power dissipation (Pc): 82 W
Maximum allowable collector-base voltage (Ucb): 60 V
Maximum allowable collector-emitter voltage (Uce): 32 V
The maximum permissible emitter-base voltage (Ueb): 4 V
Maximum direct collector current (Ic): 12 A
Limit temperature of the PN junction (Tj): 200 ° C
Boundary frequency of current transfer coefficient (ft): 2000 MHz
The collector junction capacity (Cc): 60 pf
Static current transfer coefficient (hfe): 20